Semiconducting properties of Ge-doped BaSnO3 ceramic
نویسندگان
چکیده
منابع مشابه
Optical and electrical properties of undoped and doped Ge nanocrystals
Size-dependent photoluminescence characteristics from Ge nanocrystals embedded in different oxide matrices have been studied to demonstrate the light emission in the visible wavelength from quantum-confined charge carriers. On the other hand, the energy transfer mechanism between Er ions and Ge nanocrystals has been exploited to exhibit the emission in the optical fiber communication wavelength...
متن کاملLuminescence Properties of Oxyfluoride Glass and Glass Ceramic Doped with Y3 + Ions
Oxyfluoride glass ceramics containing CaF2nano-crystals doped with Y3+ ions were prepared by one-step crystallization of SiO2- Al2O3- CaO- CaF2 glasses at different temperatures. X- ray diffraction (XRD) results have revealed that CaF2 was the only precipitated crystalline phase in glass ceramic samples. According to the XRD results, a glass ceramic was selected as the best sample in order to ...
متن کاملPlasmonic Ge-doped ZnO nanocrystals.
We present the first colloidal synthesis of Ge-doped ZnO nanocrystals, which are produced by a scalable method that uses only air and moisture stable precursors. The incorporation of tetravalent Ge ions within ZnO nanocrystals generates a surface plasmon resonance in the near-mid infrared, and induces a change in morphology, from isotropic spheroidal nanocrystals to rod-like, elongated structur...
متن کاملOptical and Electrical Properties of Thin Film BaSnO3 Author
Thin films of the perovskite barium tin oxide (BaSnO3) were prepared and characterized by their structural optical, electrical, and photoluminescent characteristics. Film deposition methods included both RF sputtering and pulsed laser deposition techniques. High quality, oriented films having optical bandgaps ranging between 3.7 eV & 4.4 eV were produced on various substrates. The undoped films...
متن کاملFabrication of corrugated Ge-doped silica fibers.
We present a method of fabricating Ge-doped SiO2 fibers with corrugations around their full circumference for a desired length in the longitudinal direction. The procedure comprises three steps: hydrogenation of Ge-doped SiO2 fibers to increase photosensitivity, recording of Bragg gratings with ultraviolet light to achieve modulation of refractive index, and chemical etching. Finite-length, rad...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Alloys and Compounds
سال: 2010
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2010.07.041